Resultats de la cerca - Perez, I.V

  • Mostrar 1 - 1 resultats de 1
Refinar resultats
  1. 1
    Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

    Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma per Adegboyega, G., Perez, I.V, Poggi, Antonella, Susi, E

    Publicat 2020
    Obtenir text complet
    Revista
    Afegir a favorits
    Guardat en:

Eines de cerca: