APA (7 ম সংস্করণ) উদ্ধৃতি

Adegboyega, G., Perez, I., Poggi, A., & Susi, E. (2020). Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma. Journal of vacuum science & technology B.

শিকাগো স্টাইল (17 তম সংস্করণ) উদ্ধৃতি

Adegboyega, G., I.V Perez, Antonella Poggi, এবং E. Susi. Deep Level Transient Spectroscopy Study of the Damage Induced in N-type Silicon by a Gate Oxide Etching in a CHF3/Ar Plasma. Journal of vacuum science & technology B, 2020.

M.L.A (9 ম সংস্করণ) উদ্ধৃতি

Adegboyega, G., et al. Deep Level Transient Spectroscopy Study of the Damage Induced in N-type Silicon by a Gate Oxide Etching in a CHF3/Ar Plasma. Journal of vacuum science & technology B, 2020.