Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
International Journal of vacuum science & technology B 15(3):623 - 628
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| Main Authors: | , , , |
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| Formato: | Revista |
| Idioma: | inglés |
| Publicado: |
Journal of vacuum science & technology B
2020
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| Subjects: | |
| Acceso en liña: | https://ir.oauife.edu.ng/handle/123456789/5091 |
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| Summary: | International Journal of vacuum science & technology B 15(3):623 - 628 |
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