Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
International Journal of vacuum science & technology B 15(3):623 - 628
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Journal of vacuum science & technology B
2020
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| On-line přístup: | https://ir.oauife.edu.ng/handle/123456789/5091 |
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| author | Adegboyega, G. Perez, I.V Poggi, Antonella Susi, E |
| author_facet | Adegboyega, G. Perez, I.V Poggi, Antonella Susi, E |
| author_sort | Adegboyega, G. |
| collection | DSpace |
| description | International Journal of vacuum science & technology B 15(3):623 - 628 |
| format | Journal |
| id | oai:ir.oauife.edu.ng:123456789-5091 |
| institution | My University |
| language | English |
| publishDate | 2020 |
| publisher | Journal of vacuum science & technology B |
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| spelling | oai:ir.oauife.edu.ng:123456789-50912020-01-20T12:28:26Z Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma Adegboyega, G. Perez, I.V Poggi, Antonella Susi, E transient spectroscopy the dry etching Arrhenius plot activation energies, International Journal of vacuum science & technology B 15(3):623 - 628 Deep level transient spectroscopy was used to detect the presence of deep levels correlated to the defects induced in the Si substrate by a CHF <sub> 3 </sub> /Ar dry etch of a 550 Å gate oxide as a function of the rf power. Several energy levels were observed; some of them were due to the processing before the dry etching. Three traps produced by the dry etching, with Arrhenius plot activation energies, respectively, E<sub> na1 </sub>=350 meV , E<sub> na2 </sub>=220 meV , and E<sub> na3 </sub>=100 meV , and capture cross sections around 10<sup>-20</sup> cm <sup> 2 </sup> were detected. The correlation with the surface recombination velocity variations and the F and C diffusion in the Si substrate was investigated. © 1997 American Vacuum Society 2020-01-20T12:28:24Z 2020-01-20T12:28:24Z 1997-06 Journal DOI: 10.1116/1.589304 https://ir.oauife.edu.ng/handle/123456789/5091 en text/plain Journal of vacuum science & technology B |
| spellingShingle | transient spectroscopy the dry etching Arrhenius plot activation energies, Adegboyega, G. Perez, I.V Poggi, Antonella Susi, E Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma |
| title | Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma |
| title_full | Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma |
| title_fullStr | Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma |
| title_full_unstemmed | Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma |
| title_short | Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma |
| title_sort | deep level transient spectroscopy study of the damage induced in n type silicon by a gate oxide etching in a chf3 ar plasma |
| topic | transient spectroscopy the dry etching Arrhenius plot activation energies, |
| url | https://ir.oauife.edu.ng/handle/123456789/5091 |
| work_keys_str_mv | AT adegboyegag deepleveltransientspectroscopystudyofthedamageinducedinntypesiliconbyagateoxideetchinginachf3arplasma AT pereziv deepleveltransientspectroscopystudyofthedamageinducedinntypesiliconbyagateoxideetchinginachf3arplasma AT poggiantonella deepleveltransientspectroscopystudyofthedamageinducedinntypesiliconbyagateoxideetchinginachf3arplasma AT susie deepleveltransientspectroscopystudyofthedamageinducedinntypesiliconbyagateoxideetchinginachf3arplasma |