Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

International Journal of vacuum science & technology B 15(3):623 - 628

Gorde:

Xehetasun bibliografikoak
Egile Nagusiak:	Adegboyega, G., Perez, I.V, Poggi, Antonella, Susi, E
Formatua:	Aldizkaria
Hizkuntza:	ingelesa
Argitaratua:	Journal of vacuum science & technology B 2020
Gaiak:	transient spectroscopy the dry etching Arrhenius plot activation energies,
Sarrera elektronikoa:	https://ir.oauife.edu.ng/handle/123456789/5091
Etiketak:	Etiketa erantsi Etiketarik gabe, Izan zaitez lehena erregistro honi etiketa jartzen!

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