Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

International Journal of vacuum science & technology B 15(3):623 - 628

Sábháilte in:

Sonraí bibleagrafaíochta
Príomhchruthaitheoirí:	Adegboyega, G., Perez, I.V, Poggi, Antonella, Susi, E
Formáid:	IRIS
Teanga:	Béarla
Foilsithe / Cruthaithe:	Journal of vacuum science & technology B 2020
Ábhair:	transient spectroscopy the dry etching Arrhenius plot activation energies,
Rochtain ar líne:	https://ir.oauife.edu.ng/handle/123456789/5091
Clibeanna:	Cuir clib leis Níl clibeanna ann, Bí ar an gcéad duine le clib a chur leis an taifead seo!

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