Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

International Journal of vacuum science & technology B 15(3):623 - 628

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Bibliografski detalji
Glavni autori:	Adegboyega, G., Perez, I.V, Poggi, Antonella, Susi, E
Format:	Žurnal
Jezik:	engleski
Izdano:	Journal of vacuum science & technology B 2020
Teme:	transient spectroscopy the dry etching Arrhenius plot activation energies,
Online pristup:	https://ir.oauife.edu.ng/handle/123456789/5091
Oznake:	Dodaj oznaku Bez oznaka, Budi prvi tko označuje ovaj zapis!

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