Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
International Journal of vacuum science & technology B 15(3):623 - 628
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| 主要な著者: | Adegboyega, G., Perez, I.V, Poggi, Antonella, Susi, E |
|---|---|
| フォーマット: | 雑誌 |
| 言語: | 英語 |
| 出版事項: |
Journal of vacuum science & technology B
2020
|
| 主題: | |
| オンライン・アクセス: | https://ir.oauife.edu.ng/handle/123456789/5091 |
| タグ: |
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