Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

International Journal of vacuum science & technology B 15(3):623 - 628

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Opis bibliograficzny
Główni autorzy:	Adegboyega, G., Perez, I.V, Poggi, Antonella, Susi, E
Format:	Czasopismo
Język:	angielski
Wydane:	Journal of vacuum science & technology B 2020
Hasła przedmiotowe:	transient spectroscopy the dry etching Arrhenius plot activation energies,
Dostęp online:	https://ir.oauife.edu.ng/handle/123456789/5091
Etykiety:	Dodaj etykietę Nie ma etykietki, Dołącz pierwszą etykiete!

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