Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
International Journal of vacuum science & technology B 15(3):623 - 628
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| Príomhchruthaitheoirí: | , , , |
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| Formáid: | IRIS |
| Teanga: | Béarla |
| Foilsithe / Cruthaithe: |
Journal of vacuum science & technology B
2020
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| Ábhair: | |
| Rochtain ar líne: | https://ir.oauife.edu.ng/handle/123456789/5091 |
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