Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
International Journal of vacuum science & technology B 15(3):623 - 628
Spremljeno u:
| Glavni autori: | , , , |
|---|---|
| Format: | Žurnal |
| Jezik: | engleski |
| Izdano: |
Journal of vacuum science & technology B
2020
|
| Teme: | |
| Online pristup: | https://ir.oauife.edu.ng/handle/123456789/5091 |
| Oznake: |
Dodaj oznaku
Bez oznaka, Budi prvi tko označuje ovaj zapis!
|
Budi prvi tko komentira!