Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

International Journal of vacuum science & technology B 15(3):623 - 628

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Autori principali: Adegboyega, G., Perez, I.V, Poggi, Antonella, Susi, E
Natura: Periodico
Lingua:inglese
Pubblicazione: Journal of vacuum science & technology B 2020
Soggetti:
transient spectroscopy
the dry etching
Arrhenius plot activation energies,
Accesso online:https://ir.oauife.edu.ng/handle/123456789/5091
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