Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

International Journal of vacuum science & technology B 15(3):623 - 628

Furkejuvvon:
Bibliográfalaš dieđut
Váldodahkkit: Adegboyega, G., Perez, I.V, Poggi, Antonella, Susi, E
Materiálatiipa: Áigečála
Giella:eaŋgalasgiella
Almmustuhtton: Journal of vacuum science & technology B 2020
Fáttát:
Liŋkkat:https://ir.oauife.edu.ng/handle/123456789/5091
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