Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma
International Journal of vacuum science & technology B 15(3):623 - 628
Shranjeno v:
| Main Authors: | , , , |
|---|---|
| Format: | Revija |
| Jezik: | angleščina |
| Izdano: |
Journal of vacuum science & technology B
2020
|
| Teme: | |
| Online dostop: | https://ir.oauife.edu.ng/handle/123456789/5091 |
| Oznake: |
Označite
Brez oznak, prvi označite!
|
Komentirajte kot prvi!