Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

International Journal of vacuum science & technology B 15(3):623 - 628

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Detalles Bibliográficos
Main Authors:	Adegboyega, G., Perez, I.V, Poggi, Antonella, Susi, E
Formato:	Revista
Idioma:	inglés
Publicado:	Journal of vacuum science & technology B 2020
Subjects:	transient spectroscopy the dry etching Arrhenius plot activation energies,
Acceso en liña:	https://ir.oauife.edu.ng/handle/123456789/5091
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