Intrinsic gettering of Cr impurities in p-type Cz silicon
International journal physica status solidi Volume (a)121 No1 Pg:181-185
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physica status solidi (a
2023
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| author | Adegboyega, G.A Poggi, Antonella |
| author_facet | Adegboyega, G.A Poggi, Antonella |
| author_sort | Adegboyega, G.A |
| collection | DSpace |
| description | International journal physica status solidi Volume (a)121 No1 Pg:181-185 |
| format | Journal |
| id | oai:ir.oauife.edu.ng:123456789-5512 |
| institution | My University |
| language | English |
| publishDate | 2023 |
| publisher | physica status solidi (a |
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| spelling | oai:ir.oauife.edu.ng:123456789-55122023-05-13T17:51:01Z Intrinsic gettering of Cr impurities in p-type Cz silicon Adegboyega, G.A Poggi, Antonella interstitial oxygen oxygen precipitates high temperature oxygen Hochtemperatursauerstoffpräzipitate oxygen precipitates International journal physica status solidi Volume (a)121 No1 Pg:181-185 The gettering of chromium impurities by means of high temperature oxygen precipitates is studied by means of resistivity, lifetime, and infrared absorption spectroscopy measurements. The results show that the density of interstitial oxygen, following an oxygen precipitation step, is rather low, and the presence of this interstitial oxygen is closely connected with the formation of the so-called new donor defect. Most of the high temperature (T = 1000°C) oxygen precipitates seem to appear in the form of SiO2 and there is a strong evidence of a redissolution of the oxygen precipitates due to Cr diffusion. The presence of this high temperature oxygen precipitate shows a high efficiency in the gettering of Cr impurities.Das Gettern von Chromverunreinigungen mittels Hochtemperatur-Sauerstoffpräzipitaten wird mittels Widerstands-, Lebensdauer- und Infrarotspektroskopiemessungen untersucht. Die Ergebnisse zeigen, daß die Dichte des Zwischengittersauerstoffs nach dem Sauerstoffpräzipitationsschritt ziemlich niedrig ist, und die Anwesenheit dieses Zwischengittersauerstoffs eng verbunden ist mit der Bildung von sogenannten „new-Donor”-Defekten. Die meisten der Hochtemperatursauerstoffpräzipitate (T = 1000°C) scheinen in Form von SiO2 vorzuliegen, und es existiert ein starker Hinweis auf die Wiederauflösung der Sauerstoffpräzipitate infolge der Cr-Diffusion. Die Anwesenheit dieser Hochtemperatursauerstoffpräzipitate zeigen einen hohen Wirkungsgrad für die Getterung der Cr-Verun-reinigungen 2023-05-13T17:51:01Z 2023-05-13T17:51:01Z 1990-09 Journal DOI: 10.1002/pssa.2211210121 https://ir.oauife.edu.ng/123456789/5512 en text/plain physica status solidi (a |
| spellingShingle | interstitial oxygen oxygen precipitates high temperature oxygen Hochtemperatursauerstoffpräzipitate oxygen precipitates Adegboyega, G.A Poggi, Antonella Intrinsic gettering of Cr impurities in p-type Cz silicon |
| title | Intrinsic gettering of Cr impurities in p-type Cz silicon |
| title_full | Intrinsic gettering of Cr impurities in p-type Cz silicon |
| title_fullStr | Intrinsic gettering of Cr impurities in p-type Cz silicon |
| title_full_unstemmed | Intrinsic gettering of Cr impurities in p-type Cz silicon |
| title_short | Intrinsic gettering of Cr impurities in p-type Cz silicon |
| title_sort | intrinsic gettering of cr impurities in p type cz silicon |
| topic | interstitial oxygen oxygen precipitates high temperature oxygen Hochtemperatursauerstoffpräzipitate oxygen precipitates |
| url | https://ir.oauife.edu.ng/123456789/5512 |
| work_keys_str_mv | AT adegboyegaga intrinsicgetteringofcrimpuritiesinptypeczsilicon AT poggiantonella intrinsicgetteringofcrimpuritiesinptypeczsilicon |