Electrical Properties of Silver Impurities and their Annealing Behaviour in p-Type Fz Silicon
International Journal de Physique III Vol.6,No12,p.1691-1696
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| প্রধান লেখক: | , , , |
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| বিন্যাস: | পত্রিকা |
| ভাষা: | ইংরেজি |
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Journal de Physique III
2023
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| বিষয়গুলি: | |
| অনলাইন ব্যবহার করুন: | https://ir.oauife.edu.ng/123456789/5531 |
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| _version_ | 1810764579649617920 |
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| author | Adegboyega, G.A Passari, L Butturri, Maria Angela Poggi, Antonella |
| author_facet | Adegboyega, G.A Passari, L Butturri, Maria Angela Poggi, Antonella |
| author_sort | Adegboyega, G.A |
| collection | DSpace |
| description | International Journal de Physique III Vol.6,No12,p.1691-1696 |
| format | Journal |
| id | oai:ir.oauife.edu.ng:123456789-5531 |
| institution | My University |
| language | English |
| publishDate | 2023 |
| publisher | Journal de Physique III |
| record_format | dspace |
| spelling | oai:ir.oauife.edu.ng:123456789-55312023-05-13T17:53:45Z Electrical Properties of Silver Impurities and their Annealing Behaviour in p-Type Fz Silicon Adegboyega, G.A Passari, L Butturri, Maria Angela Poggi, Antonella Silver atom concentration The electrical Properties Isochronal annealing a large fraction International Journal de Physique III Vol.6,No12,p.1691-1696 The electrical activity of silver as well as its annealing properties in 10 Omega cm p-type Fz silicon substrate are studied by means of the four-point probe and minority carrier lifetime measurements. Silver atom concentration in the range 10^{14} to 10^{15} cm^{-3} consistently showed a donor type behaviour in the material and its presence led to a reduction of up to two orders of magnitude in the lifetime of minority carriers by the formation of deep-level traps. Isochronal annealing of silver contaminated specimens showed some gettering of the Ag impurities with resulting temperature dependent changes in the resistivity as well as the minority carrier lifetime values. Analysis of our results shows that a large fraction of the silver impurity atoms present forms the deep level defects and both the deep- and donor-levels appear to originate from the same source 2023-05-13T17:53:45Z 2023-05-13T17:53:45Z 1691-12 Journal DOI: 10.1051/jp3:1996207 https://ir.oauife.edu.ng/123456789/5531 en text/plain Journal de Physique III |
| spellingShingle | Silver atom concentration The electrical Properties Isochronal annealing a large fraction Adegboyega, G.A Passari, L Butturri, Maria Angela Poggi, Antonella Electrical Properties of Silver Impurities and their Annealing Behaviour in p-Type Fz Silicon |
| title | Electrical Properties of Silver Impurities and their Annealing Behaviour in p-Type Fz Silicon |
| title_full | Electrical Properties of Silver Impurities and their Annealing Behaviour in p-Type Fz Silicon |
| title_fullStr | Electrical Properties of Silver Impurities and their Annealing Behaviour in p-Type Fz Silicon |
| title_full_unstemmed | Electrical Properties of Silver Impurities and their Annealing Behaviour in p-Type Fz Silicon |
| title_short | Electrical Properties of Silver Impurities and their Annealing Behaviour in p-Type Fz Silicon |
| title_sort | electrical properties of silver impurities and their annealing behaviour in p type fz silicon |
| topic | Silver atom concentration The electrical Properties Isochronal annealing a large fraction |
| url | https://ir.oauife.edu.ng/123456789/5531 |
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