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    Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma

    Deep level transient spectroscopy study of the damage induced in n-type silicon by a gate oxide etching in a CHF3/Ar plasma di Adegboyega, G., Perez, I.V, Poggi, Antonella, Susi, E

    Pubblicazione 2020
    “...Journal of vacuum science & technology B...”
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